Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions
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=Titanium Nitride= | |||
Titanium nitride (TiN) is a refractory, conductive ceramic that pairs excellent thermal/chemical stability with high hardness, making it a robust, CMOS‑compatible metal for microelectronics and harsh‑environment devices. | |||
It can be deposited by reactive magnetron sputtering for dense, low‑resistivity films and by atomic layer deposition (ALD) for ultra‑conformal, thickness‑controlled coatings in high‑aspect‑ratio interconnects and 3D nanostructures. | |||
In semiconductor processing, TiN serves as a copper diffusion barrier, gate/electrode material with tunable work function, hard mask/ARC, and stable contact in ferroelectric, memristive, and power devices. | |||
Optically, TiN behaves as a plasmonic metal with a tunable epsilon‑near‑zero region in the visible–near‑IR, enabling durable metasurfaces, waveguides, absorbers, and thermoplasmonic/heater structures that tolerate high temperatures better than noble metals. | |||
TiN is also a superconductor at cryogenic temperatures (critical temperatures typically around a few kelvin), supporting resonators, kinetic‑inductance detectors, nanowire single‑photon detectors, and low‑loss microwave circuits. | |||
Beyond semiconductors and photonics, TiN’s hardness, wear and corrosion resistance, and biocompatibility underpin tool coatings, tribological layers, and medical implant finishes, while its stability and moderate resistivity suit transparent‑window heaters when patterned or combined in hybrid stacks. | |||
== Deposition of Titanium Nitride == | == Deposition of Titanium Nitride == | ||