Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions
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==Atomic Layer Deposition of Aluminium Nitride (AlN)== | ==Atomic Layer Deposition of Aluminium Nitride (AlN)== | ||
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2|AlN deposition using ALD2]] | |||
==Reactive p-DC Sputtering of Aluminium Nitride (AlN)== | |||
[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|Deposition conditions and acceptance test results]] for sputter deposition of AlN in the Sputter-System Metal-Nitride(PC3). | |||
==Comparison of the methods for deposition of AlN== | ==Comparison of the methods for deposition of AlN== | ||
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*For further information on AlN deposition using the sputter systems, please contact the Thin Film Group ([mailto:thinfilm@nanolab.dtu.dk thinfilm@nanolab.dtu.dk]). The Sputter-System Metal-Nitride(PC3) was acquired partly to make it possible to deposit high-quality of AlN films. | |||
*For further information on AlN deposition using the sputter systems please contact the Thin Film Group ([mailto:thinfilm@nanolab.dtu.dk thinfilm@nanolab.dtu.dk]). The Sputter-System Metal-Nitride(PC3) was acquired partly to make it possible to deposit high-quality of AlN films. | |||