Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Silicon Nitride Etch: Difference between revisions
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{| border="2" cellspacing="2" cellpadding="3" | |||
!Parameter | |||
|Recipe name: '''Slow Etch''' | |||
|Recipe name: '''Slow Etch2''' | |||
|- | |||
|Coil Power [W] | |||
|350 | |||
|200 | |||
|- | |||
|Platen Power [W] | |||
|25 | |||
|50 | |||
|- | |||
|Platen temperature [<sup>o</sup>C] | |||
|20 | |||
|20 | |||
|- | |||
|H2 flow [sccm] | |||
|15 | |||
|15 | |||
|- | |||
|CF<sub>4</sub> flow [sccm] | |||
|30 | |||
|30 | |||
|- | |||
|Pressure [mTorr] | |||
|3 | |||
|10 | |||
|- | |||
|} | |||
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'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe''' | '''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe''' | ||
[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers) | [[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/> | ||
Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]] | Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]] | ||