Specific Process Knowledge/Thin film deposition/Deposition of MoSi: Difference between revisions
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Below is a link summarizing process results obtained with the Metal-Oxide (PC1) system: | Below is a link summarizing process results obtained with the Metal-Oxide (PC1) system: | ||
[ | *[[Specific Process Knowledge/Thin film deposition/Deposition of MoSi/MoSi Co-sputtering in Cluster Lesker PC1|MoSi Co-sputtering in Sputter-System Metal-Oxide(PC1)]] | ||
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Deposition of MoSi
Molybdenum silicide is particularly attractive for optical coatings because co-sputtering Mo with Si allows precise control of MoSi stoichiometry—and, in turn, the film’s refractive index at the design wavelength.
MoSi alloy can be deposited by DC co-sputtering in either Sputter-System Metal-Oxide (PC1) or Sputter-System Metal-Nitride (PC3)—collectively referred to as the Cluster Lesker. The process uses two 3-inch targets:
- Mo (unbonded)
- Si (indium-bonded)
Achieving the desired composition and optical properties requires careful tuning of three key parameters:
- Magnetron power on each target
- Substrate temperature
- Deposition pressure
Below is a link summarizing process results obtained with the Metal-Oxide (PC1) system: