Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
| Line 47: | Line 47: | ||
! 4" and 6" Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySi]]) | ! 4" and 6" Furnace PolySi ([[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySi]]) | ||
! PECVD ([[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]]) | ! PECVD ([[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]]) | ||
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
| Line 58: | Line 57: | ||
| Plasma Enhanced Chemical Vapor Deposition of Si | | Plasma Enhanced Chemical Vapor Deposition of Si | ||
| Sputter deposition of Si. | | Sputter deposition of Si. | ||
| Sputter deposition of Si. | | Sputter deposition of Si. | ||
| E-beam evaporation of Si. | | E-beam evaporation of Si. | ||
| Line 67: | Line 65: | ||
|Yes, B (boron) and P (phosphorus) | |Yes, B (boron) and P (phosphorus) | ||
|Yes, B and P | |Yes, B and P | ||
|None | |None | ||
|None | |None | ||
| Line 76: | Line 73: | ||
|New wafers can go directly into the furnace. Processed wafers have to be RCA cleaned | |New wafers can go directly into the furnace. Processed wafers have to be RCA cleaned | ||
| | | | ||
| | |None | ||
|RF Ar clean available | |RF Ar clean available | ||
|None | |None | ||
| Line 85: | Line 81: | ||
|~5 nm to 2 µm, if thicker layers are needed please ask the furnace team. | |~5 nm to 2 µm, if thicker layers are needed please ask the furnace team. | ||
|few nm to ~ 600 nm | |few nm to ~ 600 nm | ||
|few nm to >200 nm | |few nm to >200 nm | ||
|few nm to ? | |few nm to ? | ||
| Line 97: | Line 92: | ||
*Phosphorous doped:~20 Å/min | *Phosphorous doped:~20 Å/min | ||
|~6 Å/s can probably be higher | |~6 Å/s can probably be higher | ||
| Depends on process parameters, roughly 0.2-2 Å/s. See Process Log. | | Depends on process parameters, roughly 0.2-2 Å/s. See Process Log. | ||
|Depends on process parameters, at least 0.3 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]] | |Depends on process parameters, at least 0.3 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]] | ||
| Line 107: | Line 101: | ||
|560 °C (amorphous) and 620 °C (poly) | |560 °C (amorphous) and 620 °C (poly) | ||
|300 °C | |300 °C | ||
|room temperature | |room temperature | ||
|room temperature to 600 °C | |room temperature to 600 °C | ||
| Line 116: | Line 109: | ||
! Step coverage | ! Step coverage | ||
|Good | |Good | ||
|Medium | |Medium | ||
|Medium | |Medium | ||
| Line 127: | Line 119: | ||
|Good for fused silica, silicon oxide, silicon nitride, silicon | |Good for fused silica, silicon oxide, silicon nitride, silicon | ||
|Not tested, but do not deposit on top of silicon | |Not tested, but do not deposit on top of silicon | ||
| | | | ||
| | | | ||
| Line 143: | Line 134: | ||
* 1x 100 mm wafer | * 1x 100 mm wafer | ||
* 1x 150 mm wafer | * 1x 150 mm wafer | ||
| | | | ||
* Up to 1x6" wafers | * Up to 1x6" wafers | ||
| Line 168: | Line 154: | ||
* Quartz/fused silica wafers (RCA cleaned) | * Quartz/fused silica wafers (RCA cleaned) | ||
| | | | ||
*See the cross contamination sheets | *See the cross contamination sheets. | ||
| | | | ||
* Almost any that does not degas, see cross-contamination sheet | * Almost any that does not degas, see cross-contamination sheet | ||
| | | | ||
*Almost any that does not degas | *Almost any that does not degas at your intended substrate temperature. See also cross-contamination sheets. | ||
| | | | ||
*Almost any that does not degas | *Almost any that does not degas at your intended substrate temperature. See also cross-contamination sheet. | ||
|- | |- | ||
| Line 185: | Line 169: | ||
| | | | ||
*See the cross contamination sheets | *See the cross contamination sheets | ||
| | | | ||
*Almost any that does not degas, see the cross-contamination sheet | *Almost any that does not degas, see the cross-contamination sheet | ||
| Line 203: | Line 184: | ||
|Only in PECVD3 | |Only in PECVD3 | ||
| | | | ||
| | | | ||
| Please only deposit Si on the afternoon before a scheduled service as it can result in many flakes in the chamber. See the booking calendar or ask staff to find out when the next service will be. | | Please only deposit Si on the afternoon before a scheduled service as it can result in many flakes in the chamber. See the booking calendar or ask staff to find out when the next service will be. | ||