Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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==Deposition of PolySilicon using LPCVD== | ==Deposition of PolySilicon using LPCVD== | ||
DTU Nanolab has two furnaces for the deposition of [[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon | Polysilicon using Low Chemical Vapour Deposition]] (LPCVD). | |||
We have a 6" furnace (installed in 2011) for the deposition of standard polySi, amorphous polySi and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for the deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 100 mm wafers. | |||
*[[Specific Process Knowledge/Thin film deposition/ | In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively. | ||
*[[Specific Process Knowledge/Thin film deposition/ | |||
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Deposition using the 4" Polysilicon Furnace|Deposition of Polysilicon using the 4" Polysilicon Furnace]] | |||
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Deposition using the 6" Polysilicon Furnace|Deposition of Polysilicon using the 6" Polysilicon Furnace]] | |||
==Deposition of Silicon using PECVD== | ==Deposition of Silicon using PECVD== | ||