Specific Process Knowledge/Thin film deposition: Difference between revisions
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===Alloys=== | ===Alloys=== | ||
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=== Dielectrica === | === Dielectrica === | ||
*[[/Deposition of Silicon Nitride|Silicon Nitride]] - ''Silicon nitride and silicon oxynitride'' | *[[/Deposition of Silicon Nitride|Silicon Nitride]] - ''Silicon nitride and silicon oxynitride'' | ||
Revision as of 15:20, 16 November 2007
Choose material to deposit
Metals/elements
| 13 Al Aluminium | 14 Si Silicon | |||||
| 22 Ti Titanium | 24 Cr Chromium | 28 Ni Nickel | 29 Cu Copper | |||
| 46 Pd Palladium | 47 Ag Silver | 50 Sn Tin | ||||
| 73 Ta Tantalum | 74 W Tungsten | 78 Pt Platinum | 79 Au Gold |
Alloys
Dielectrica
- Silicon Nitride - Silicon nitride and silicon oxynitride
- Silicon Oxide
Polymers
- SU8
- Antistiction coating
- Topas
- PMMA
Choose deposition equipment
- Alcatel - E-beam evaporator and sputter tool
- Lesker - Sputter tool
- Leybold - E-beam evaporator and multiple wafer tool
- Wordentec - E-beam evaporator, sputter and thermical evaporator
- Hummer - Gold sputtering system
- PECVD - Plasma Enhanced Chemical Vapor deposition
- B2 Furnace LPCVD Nitride - Deposition of silicon nitrid
- B3 Furnace LPCVD TEOS - Deposition of silicon oxide
- B4 Furnace LPCVD PolySilicon - Deposition of polysilicon
- MVD - Molecular Vapor Deposition