Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum: Difference between revisions
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! Pre-clean | ! Pre-clean | ||
|Ar ion source | |Ar ion source | ||
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|RF Ar clean | |RF Ar clean | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to | |10Å to 600 nm * | ||
|10Å to 500 Å | |10Å to 500 Å | ||
|10Å to | |10Å to at least 100 nm (discuss with staff) | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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'''*''' '' | '''*''' ''Please send a request to us if you wish to deposit more than 600 nm (write to metal@nanolab.dtu.dk)'' | ||
Revision as of 15:21, 20 June 2025
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Molybdenum deposition
Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Temescal) | Sputter deposition (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
|---|---|---|---|
| General description | E-beam deposition of Mo
(line-of-sight deposition) |
Sputter deposition of Mo
(not line-of-sight) |
Sputter deposition of Mo
(not line-of-sight) |
| Pre-clean | Ar ion source | RF Ar clean | |
| Layer thickness | 10Å to 600 nm * | 10Å to 500 Å | 10Å to at least 100 nm (discuss with staff) |
| Deposition rate | 1Å/s to 10Å/s | Depends on process parameters, roughly about 1 Å/s | Not known yet, probably similar to 'old' Lesker sputter system |
| Batch size |
|
|
|
| Allowed materials |
|
|
Almost any as long as it does not outgas. |
| Comment | Sputter target size 2". | Sputter target size 3-4" (usually 3"). So far (June 2025) Mo has been deposited in PC1. See process log for details. |
* Please send a request to us if you wish to deposit more than 600 nm (write to metal@nanolab.dtu.dk)