Specific Process Knowledge/Etch/DRIE-Pegasus

The Bosch process in the DRIE-Pegasus

The DRIE-Pegasus takes the well established Bosch process known from the ASE a significant step further. In the ASE the Bosch process has two cycles, etch and passivation. During each cycle the process parameters are kept constant (This is, at least, that is the intention - the reality is that the ideal square function is rarely achieved during process parameter changes).

• In the passivation cycle, a C₄F₈ plasma is formed using the RF coil power only and a teflon-like coating is created on all surfaces thus protecting the sidewalls in the subsequent etch cycle.
• In the etch cycle
  • the ion bombardment driven by the platen power first removes the passivation layer on the surfaces directly exposed to the ions (i.e. horizontal surfaces)
  • then as the bottom of the structures are opened the etch of silicon itself starts.

Here, it is clear that one can distinguish two phases of the etch cycle; one where the ion bombardment removes the polymer and one where the actual etching of silicon takes place. Considering what process conditions are favorable we realize that

• the ion bombardment requires a low pressure in order for the ions to have a long mean free path and hence good directionality. Also, a high platen power is required to drive the ion bombardment.
• a higher pressure during the etch increases the density of reactive species and hence the etch rate. Since a high platen power is no longer necessary to drive the ion bombardement, lowering it will reduce the impact on the masking material thus improving the selectivity.

The hardware improvements on the DRIE-Pegasus include

• Fast response digtal MFC's mounted on top of the process chamber itself to shorten the gas line
• Fast APC valve
• Fast RF power supply

Details on DRIE-Pegasus

Further info:

FAQ (Under construction)

Nanoetch (Under construction)