Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions
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Some process information is available here for e-beam evaporated films: | Some process information is available here for e-beam evaporated films: | ||
<!--*[[/Electroplating of nickel|Electroplating of nickel]]--> | <!--*[[/Electroplating of nickel|Electroplating of nickel]]--> | ||
*[[/Stress Wordentec Ni films|Stress in | *[[/Stress Wordentec Ni films|Stress in e-beam evaporated Ni films: study here]] ''(from the now decommissioned Wordentec deposition tool - basic trends in results should be transferable to other e-beam evaporators).'' | ||
In the chart below you can compare the different deposition equipment: | In the chart below you can compare the different deposition equipment: | ||
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
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! General description | ! General description | ||
|E-beam deposition of Nickel | |E-beam deposition of Nickel | ||
|Sputter deposition of Nickel | |Sputter deposition of Nickel | ||
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|Ar ion etch (only in E-beam evaporator Temescal) | |Ar ion etch (only in E-beam evaporator Temescal) | ||
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|RF Ar clean | |RF Ar clean | ||
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! Layer thickness | ! Layer thickness | ||
|10 Å to 1 µm * | |10 Å to 1 µm * | ||
|10 Å to | |10 Å to 500 nm ** | ||
|10 Å to 500 nm ** | |||
|10 Å to | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
|1-10 Å/s | |1-10 Å/s | ||
|Depends on process parameters, about 1 Å/s | |Depends on process parameters, about 1 Å/s | ||
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*Up to 3x8" wafers (ask for holder) | *Up to 3x8" wafers (ask for holder) | ||
*Many smaller pieces | *Many smaller pieces | ||
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* Pieces or | * Pieces or | ||
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*Almost any that does not degas at your intended substrate temperature. See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | *Almost any that does not degas at your intended substrate temperature. See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
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* Almost any that do not degas. | * Almost any that do not degas. | ||
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! Comment | ! Comment | ||
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*May use high-strength magnet for deposition. | *May use high-strength magnet for deposition. | ||