Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
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*Silicon Nitride | *Silicon Nitride | ||
| | *Silicon Oxide | ||
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*Photoresist | |||
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*Photoresist | *Photoresist | ||
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|Etch rate | |Etch rate | ||
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*Si(100) @80<sup>o</sup>C: 1.29+0.05 µm/min | |||
*Si(100) @70<sup>o</sup>C: ~0.7 µm/min | |||
*Si(100) @60<sup>o</sup>C: ~0.4 µm/min | |||
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|<40nm/min to >600nm/min depending on recipe parameters and mask design | |<40nm/min to >600nm/min depending on recipe parameters and mask design | ||