Specific Process Knowledge/Pattern Design/Mask Specifications: Difference between revisions
| Line 28: | Line 28: | ||
: Chromium down | : Chromium down | ||
GDS-file: GLO006_v7.gds | GDS-file: GLO006_v7.gds<br> | ||
Top cell: wafer | Top cell: wafer | ||
Layer (GDS number): 01 | Layer (GDS number): 01 <br> | ||
Mask Type: Digitised data= Dark, right reading | Mask Type: Digitised data= Dark, right reading<br> | ||
Text(max 30 characters): init-2019-Nitride-etch | Text(max 30 characters): init-2019-Nitride-etch | ||
Layer (GDS number): 02 | Layer (GDS number): 02<br> | ||
Mask Type: Digitised data= Clear, Wrong reading | Mask Type: Digitised data= Clear, Wrong reading<br> | ||
Text(max 30 characters): init-2019-KOH-backside | Text(max 30 characters): init-2019-KOH-backside | ||