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Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation: Difference between revisions

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==General Purpose Annealing furnace (C2) ==
 
The furnace is being tested.
 
==General Purpose Annealing furnace (C2)==


The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack.
The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack.


The C2 furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers.   
The furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers.   


A permission from the Thin Film group is required, before samples are annealed in the furnace.
Annealings can be performed in a nitrogen atmosphere, with an nitrogen flow up to 10 SLM.


An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C.
An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C.


Annealings can be performed in a nitrogen atmosphere, with nitrogen flow rates adjustable up to 10 SLM.  
Samples must be able to tolerate the annealing temperature. A permission from the Thin Film group is also required, before samples are annealed in the furnace.  


A permission from the Thin Film group is required, before samples are annealed in the furnace.
Please also check the cross contamination information in LabManager, before you use the furnace. And note that samples that have been annealed in the furnace are considered "dirty" or "contaminated with metal traces" and are therefore not allowed in any other furnaces afterwards.  


Please also check the cross contamination information in LabManager before you use the furnace.  
4" wafers can be placed horizontally in a quartz boat in the furnace, and up to two 6" wafer can be placed horizontally on two boats. Small sample are placed on a 6" carrier wafer (with or without a recess) on a quartz boat.  


The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.
The motor for automatic opening and closing of furnace door is broken, and the door therefore has to be opened and closed manually.  
    
    


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*Up to 30 4" wafers
*Up to 30 4" wafers
*1 6" wafers (placed horizontally on the boat)  
*1-2 6" wafers (placed horizontally on the boats)
*Several smaller samples (placed horizontally on a 6" carrier wafer placed on the boat)
*Several smaller samples (placed horizontally on a 6" carrier wafer placed on the boat)
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