Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation: Difference between revisions
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==General Purpose Annealing furnace (C2)== | ==General Purpose Annealing furnace (C2)== | ||
The C2 furnace has | The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack. | ||
The C2 furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers. | |||
A permission from the Thin Film group is required, before samples are annealed in the furnace. | |||
An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C. | |||
Annealings can be performed in a nitrogen atmosphere, with nitrogen flow rates adjustable up to 10 SLM. | |||
A permission from the Thin Film group is required, before samples are annealed in the furnace. | A permission from the Thin Film group is required, before samples are annealed in the furnace. | ||
Please also check the cross contamination information in LabManager before you use the furnace. | |||
The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded. | The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded. | ||
'''The user manual and contact information can be found in LabManager:''' | '''The user manual and contact information can be found in LabManager:''' | ||
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General Purpose Annealing furnace (C2)
The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack.
The C2 furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers.
A permission from the Thin Film group is required, before samples are annealed in the furnace.
An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C.
Annealings can be performed in a nitrogen atmosphere, with nitrogen flow rates adjustable up to 10 SLM.
A permission from the Thin Film group is required, before samples are annealed in the furnace.
Please also check the cross contamination information in LabManager before you use the furnace.
The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.
The user manual and contact information can be found in LabManager:
Process knowledge
| Purpose |
| |
|---|---|---|
| Performance | Lateral oxidation rate |
|
| Process parameter range | Process temperature |
|
| Process pressure |
| |
| Gasses on the system |
| |
| Substrates | Batch size |
|
| Substrate materials allowed |
|