Jump to content

Specific Process Knowledge/Etch/Titanium Oxide: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Hvje (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
45 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,301 edits
Line 26: Line 26:
!Generel description
!Generel description
|Wet etch of TiO2 (ALD)
|Wet etch of TiO2 (ALD)
|
|Dry etch of TiO2
|-
|-


Revision as of 14:19, 4 September 2025

Feedback to this page: click here


Etch of Titanium oxide has been test in the ICP metal etcher.


Comparison of Titanium Oxide (ALD) etch Methods

BHF ICP Metal Etcher
Generel description Wet etch of TiO2 (ALD) Dry etch of TiO2
Etch rate range 2,5 nm/min
  • ~30nm/min (pure Al)
Etch profile
  • Isotropic
  • Isotropic
Substrate size
  • Any size (in beaker)
  • Chips (6-60 mm)
  • 100 mm wafers
  • 150 mm wafers
Allowed materials In beaker:
  • Any material
  • Every thing that is allowed in the Developer: TMAH Manual
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/Titanium_Oxide&oldid=54344"