Specific Process Knowledge/Etch/Titanium Oxide: Difference between revisions

Revision as of 08:37, 27 May 2025

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	BHF	ICP Metal Etcher
Generel description	Wet etch of TiO2 (ALD)
Etch rate range	2,5 nm/min	~30nm/min (pure Al)
Etch profile	Isotropic	Isotropic
Substrate size	Any size (in beaker)	Chips (6-60 mm) 100 mm wafers 150 mm wafers
Allowed materials	In beaker: Any material	Every thing that is allowed in the Developer: TMAH Manual

Revision as of 08:32, 27 May 2025 view source Hvje (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 45 edits →Comparison of Titanium Oxide (ALD) etch Methods Tag: Visual edit ← Older edit		Revision as of 08:37, 27 May 2025 view source Hvje (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 45 edits →Etch of Titanium oxide has been test in the ICP metal etcher. Tag: Visual edit Newer edit →
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	*[[/ICP metal\|Titanium Oxide etch using ICP metal]]		*[[/ICP metal\|Titanium Oxide etch using ICP metal]]
			*Titanium Oxide etch using BHF