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| Line 19: |
Line 19: |
| !BHF | | !BHF |
| !ICP Metal Etcher | | !ICP Metal Etcher |
| !
| |
| !
| |
| |- | | |- |
|
| |
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| Line 28: |
Line 26: |
| |Wet etch of TiO2 (ALD) | | |Wet etch of TiO2 (ALD) |
| | | | | |
| |Dry plasma etch of Al
| |
| |Sputtering of Al - pure physical etch.
| |
| |- | | |- |
|
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| Line 38: |
Line 34: |
| | | | | |
| *~30nm/min (pure Al) | | *~30nm/min (pure Al) |
| |
| |
| *~350 nm/min (depending on features size and etch load)
| |
| |
| |
| *~30nm/min (not tested yet)
| |
| |- | | |- |
|
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| Line 51: |
Line 43: |
| | | | | |
| *Isotropic | | *Isotropic |
| |
| |
| *Anisotropic (vertical sidewalls)
| |
| |
| |
| *Anisotropic (angles sidewalls, typical around 70 dg)
| |
| |- | | |- |
|
| |
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| Line 68: |
Line 56: |
| *100 mm wafers | | *100 mm wafers |
| *150 mm wafers | | *150 mm wafers |
| |
| |
| *smaller pieces on a carrier wafer
| |
| *<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
| |
| *<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
| |
| |
| |
| Smaller pieces glued to carrier wafer
| |
| *<nowiki>#</nowiki>1 50mm wafer
| |
| *<nowiki>#</nowiki>1 100mm wafer
| |
| *<nowiki>#</nowiki>1 150mm wafer
| |
| *<nowiki>#</nowiki>1 200mm wafer
| |
| |- | | |- |
|
| |
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| Line 87: |
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| | | | | |
| *Every thing that is allowed in the Developer: TMAH Manual | | *Every thing that is allowed in the Developer: TMAH Manual |
| |
| |
| *Silicon
| |
| *Quartz/fused silica
| |
| *Photoresist/e-beam resist
| |
| *PolySilicon,
| |
| *Silicon oxide
| |
| *Silicon (oxy)nitride
| |
| *Aluminium
| |
| *Titanium
| |
| *Chromium
| |
| |
| |
| *Silicon
| |
| *Silicon oxides
| |
| *Silicon nitrides
| |
| *Metals from the +list
| |
| *Metals from the -list
| |
| *Alloys from the above list
| |
| *Stainless steel
| |
| *Glass
| |
| *III-V materials
| |
| *Resists
| |
| *Polymers
| |
| *Capton tape
| |
| |- | | |- |
| |} | | |} |
