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Specific Process Knowledge/Etch/Titanium Oxide: Difference between revisions

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Hvje (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
45 edits
Line 19: Line 19:
!BHF
!BHF
!ICP Metal Etcher
!ICP Metal Etcher
!
!
|-
|-


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|Wet etch of TiO2 (ALD)
|Wet etch of TiO2 (ALD)
|
|
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch.
|-
|-


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*~30nm/min (pure Al)
*~30nm/min (pure Al)
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*~350 nm/min (depending on features size and etch load)
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*~30nm/min (not tested yet)
|-
|-


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*Isotropic
*Isotropic
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*Anisotropic (vertical sidewalls)
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*Anisotropic (angles sidewalls, typical around 70 dg)
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*100 mm wafers  
*100 mm wafers  
*150 mm wafers
*150 mm wafers
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*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
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Line 87: Line 65:
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*Every thing that is allowed in the Developer: TMAH Manual
*Every thing that is allowed in the Developer: TMAH Manual
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*Silicon
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
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*Silicon
*Silicon oxides
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}

Revision as of 08:32, 27 May 2025

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Etch of Titanium oxide has been test in the ICP metal etcher.


Comparison of Titanium Oxide (ALD) etch Methods

BHF ICP Metal Etcher
Generel description Wet etch of TiO2 (ALD)
Etch rate range 2,5 nm/min
  • ~30nm/min (pure Al)
Etch profile
  • Isotropic
  • Isotropic
Substrate size
  • Any size (in beaker)
  • Chips (6-60 mm)
  • 100 mm wafers
  • 150 mm wafers
Allowed materials In beaker:
  • Any material
  • Every thing that is allowed in the Developer: TMAH Manual
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