Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions
Line 14: | Line 14: | ||
| Gas | | Gas | ||
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm | | C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm | ||
| D: C<sub>4</sub>F<sub>8</sub> 50 sccm | | D: C<sub>4</sub>F<sub>8</sub> 50 sccm | ||
| E: C<sub>4</sub>F<sub>8</sub> 50 sccm, SF<sub>6</sub> 50 sccm | |||
|- | |- | ||
| Power | | Power |
Revision as of 11:04, 23 May 2011
nano1.42 versus pxnano2
Recipe | nano1.42 | pxnano2 | ||
---|---|---|---|---|
Tool | Pegasus | ASE | ||
Parameters | Gas | C4F8 75 sccm, SF6 38 sccm | D: C4F8 50 sccm | E: C4F8 50 sccm, SF6 50 sccm |
Power | 800 W CP, 40 W PP | D: 500 W CP | E: 350 W CP, 30 W PP | |
Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | 10 mTorr | ||
Temperature | -20 degs | 20 degrees | ||
Hardware | 100 mm Spacers | ? | ||
Time | 120 secs | D: 3 secs, E: 5 secs, total 12 cycles, 96 secs | ||
Conditions | Run ID | 2150 | wf_2e09b_mar23 | |
Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | none | ||
Mask | 211 nm zep etched down to 80 nm | 211 nm zep etched down to 130 nm |
-
The 30 nm trenches etched 120 seconds nano1.42
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The 30 nm trenches etched 96 seconds pxnano2
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The 60 nm trenches etched 120 seconds
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The 60 nm trenches etched 96 seconds
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The 90 nm trenches etched 120 seconds
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The 90 nm trenches etched 96 seconds
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The 120 nm trenches etched 120 seconds
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The 120 nm trenches etched 96 seconds
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The 150 nm trenches etched 120 seconds
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The 150 nm trenches etched 96 seconds