Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions

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| Gas
| Gas
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
| D: C<sub>4</sub>F<sub>8</sub> 50 sccm, SF<sub>6</sub> 50 sccm
| D: C<sub>4</sub>F<sub>8</sub> 50 sccm
| E: SF<sub>6</sub> 50 sccm
| E: C<sub>4</sub>F<sub>8</sub> 50 sccm, SF<sub>6</sub> 50 sccm
|-
|-
| Power
| Power

Revision as of 11:04, 23 May 2011

nano1.42 versus pxnano2

Recipe nano1.42 pxnano2
Tool Pegasus ASE
Parameters Gas C4F8 75 sccm, SF6 38 sccm D: C4F8 50 sccm E: C4F8 50 sccm, SF6 50 sccm
Power 800 W CP, 40 W PP D: 500 W CP E: 350 W CP, 30 W PP
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr 10 mTorr
Temperature -20 degs 20 degrees
Hardware 100 mm Spacers ?
Time 120 secs D: 3 secs, E: 5 secs, total 12 cycles, 96 secs
Conditions Run ID 2150 wf_2e09b_mar23
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs none
Mask 211 nm zep etched down to 80 nm 211 nm zep etched down to 130 nm