Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions
| Line 9: | Line 9: | ||
! colspan="2"| Tool | ! colspan="2"| Tool | ||
| Pegasus | | Pegasus | ||
| colspan="2" | ASE | | colspan="2" align="center"| ASE | ||
|- | |- | ||
! rowspan="6" align="center"| Parameters | ! rowspan="6" align="center"| Parameters | ||
| Line 45: | Line 45: | ||
| Conditioning | | Conditioning | ||
| Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | ||
| colspan="2" | none | |||
|- | |- | ||
| Mask | | Mask | ||
| 211 nm zep etched down to | | 211 nm zep etched down to 80 nm | ||
| colspan="2" | 211 nm zep etched down to 130 nm | |||
|- | |- | ||
|} | |} | ||
Revision as of 10:42, 23 May 2011
nano1.42 versus pxnano2
| Recipe | nano1.42 | pxnano2 | ||
|---|---|---|---|---|
| Tool | Pegasus | ASE | ||
| Parameters | Gas | C4F8 75 sccm, SF6 38 sccm | D: C4F8 50 sccm, SF6 50 sccm | E: SF6 50 sccm |
| Power | 800 W CP, 40 W PP | D: 500 W CP | E: 350 W CP, 30 W PP | |
| Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | 10 mTorr | ||
| Temperature | -20 degs | 20 degrees | ||
| Hardware | 100 mm Spacers | ? | ||
| Time | 120 secs | D: 3 secs, E: 5 secs, total 12 cycles, 96 secs | ||
| Conditions | Run ID | 2150 | wf_2e09b_mar23 | |
| Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | none | ||
| Mask | 211 nm zep etched down to 80 nm | 211 nm zep etched down to 130 nm | ||
- The results
-
The 30 nm trenches etched 120 seconds nano1.42 -
The 30 nm trenches etched 96 seconds pxnano2 -
The 60 nm trenches etched 120 seconds -
The 60 nm trenches etched 96 seconds -
The 90 nm trenches etched 120 seconds -
The 90 nm trenches etched 96 seconds -
The 120 nm trenches etched 120 seconds -
The 120 nm trenches etched 96 seconds -
The 150 nm trenches etched 120 seconds -
The 150 nm trenches etched 96 seconds
