Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions
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! pxnano2 | ! pxnano2 | ||
|- | |- | ||
! | ! colspan="2"| Tool | ||
| Pegasus | | Pegasus | ||
| ASE | | ASE |
Revision as of 10:33, 23 May 2011
nano1.42 versus pxnano2
Recipe | nano1.42 | pxnano2 | |
---|---|---|---|
Tool | Pegasus | ASE | |
Parameters | Gas | C4F8 75 sccm, SF6 38 sccm | |
Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | ||
Power | 800 W CP, 40 W PP | ||
Temperature | -20 degs | ||
Hardware | 100 mm Spacers | ||
Time | 120 secs | ||
Conditions | Run ID | 2017 | |
Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | ||
Mask | 211 nm zep etched down to 82 nm |
-
The 30 nm trenches etched 120 seconds nano1.42
-
The 30 nm trenches etched 96 seconds pxnano2
-
The 60 nm trenches etched 120 seconds
-
The 60 nm trenches etched 96 seconds
-
The 90 nm trenches etched 120 seconds
-
The 90 nm trenches etched 96 seconds
-
The 120 nm trenches etched 120 seconds
-
The 120 nm trenches etched 96 seconds
-
The 150 nm trenches etched 120 seconds
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The 150 nm trenches etched 96 seconds