Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions

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{| border="2" cellpadding="2" cellspacing="1"  
{| border="2" cellpadding="2" cellspacing="1"  
|+ '''h'''
|+ '''Recipe nano1.42'''
|-
|-
! rowspan="6" align="center"| Recipe
! rowspan="6" align="center"| Recipe
| Gas
| Gas
| BCl<sub>3</sub> 5 sccm, HBR 15 sccm
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
|-
|-
| Pressure
| Pressure
| 2 mTorr, Strike 3 secs @ 5 mTorr
| 4 mTorr, Strike 3 secs @ 15 mTorr
|-
|-
| Power
| Power
| 900 W CP, 75 W PP
| 800 W CP, 40 W PP
|-  
|-  
| Temperature
| Temperature
| 50 degs
| -20 degs
|-
|-
| Hardware
| Hardware
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|-
|-
| Time
| Time
| 60, 120 and 180 secs
| 120 secs
|-
|-
! rowspan="5" align="center"| Conditions
! rowspan="3" align="center"| Conditions
| Run ID
| Run ID
| 452, 453 and 454
| 2017
|-
|-
| Conditioning
| Conditioning
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|-
|-
| Mask
| Mask
| 190 nm zep  
| 211 nm zep etched down to 82 nm
|-  
|-  
|}
|}


<gallery caption="The results" widths="350" heights="300" perrow="2">
<gallery caption="The results" widths="350" heights="300" perrow="2">

Revision as of 09:09, 23 May 2011

nano1.42 versus pxnano2

Recipe nano1.42
Recipe Gas C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 40 W PP
Temperature -20 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 2017
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 211 nm zep etched down to 82 nm