Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions
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<gallery caption="The results" widths="350" perrow="2"> | <gallery caption="The results" widths="350" heights="300" perrow="2"> | ||
image:WF_2E09a_mar23_2011-030.jpg|The 30 nm trenches etched 120 seconds nano1.42 | image:WF_2E09a_mar23_2011-030.jpg|The 30 nm trenches etched 120 seconds nano1.42 | ||
Revision as of 11:36, 19 May 2011
nano1.42 versus pxnano2
| Recipe | Gas | BCl3 5 sccm, HBR 15 sccm |
|---|---|---|
| Pressure | 2 mTorr, Strike 3 secs @ 5 mTorr | |
| Power | 900 W CP, 75 W PP | |
| Temperature | 50 degs | |
| Hardware | 100 mm Spacers | |
| Time | 60, 120 and 180 secs | |
| Conditions | Run ID | 452, 453 and 454 |
| Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
| Mask | 190 nm zep |
- The results
-
The 30 nm trenches etched 120 seconds nano1.42 -
The 30 nm trenches etched 96 seconds pxnano2 -
The 60 nm trenches etched 120 seconds -
The 60 nm trenches etched 96 seconds -
The 90 nm trenches etched 120 seconds
-
The 90 nm trenches etched 96 seconds -
The 120 nm trenches etched 120 seconds
-
The 120 nm trenches etched 96 seconds -
The 150 nm trenches etched 120 seconds
-
The 150 nm trenches etched 96 seconds
