Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
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==DRIE-Pegasus== | ==Advantages of the DRIE-Pegasus== | ||
The DRIE-Pegasus takes the well established Bosch process known from the [[Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]] a significant step further. In the ASE the Bosch process has two cycles, etch and passivation. Within each cycle the process parameters are kept constant (This is, at least, that is the intention - the reality is that the ideal square function is rarely achieved during process parameter changes). In the passivation cycle, a C<sub>4</sub>F<sub>8</sub> plasma is formed using the RF coil power only and a teflon-like coating is created on all surfaces thus protecting the sidewalls in the subsequent etch cycle. In the etch cycle the ion bombardment driven by the platen power ''first'' removes the passivation layer on the surfaces directly exposed to the ions (i.e. horizontal surfaces) ''then'' as the bottom of the structures are opened the etch itself starts. | The DRIE-Pegasus takes the well established Bosch process known from the [[Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]] a significant step further. In the ASE the Bosch process has two cycles, etch and passivation. Within each cycle the process parameters are kept constant (This is, at least, that is the intention - the reality is that the ideal square function is rarely achieved during process parameter changes). In the passivation cycle, a C<sub>4</sub>F<sub>8</sub> plasma is formed using the RF coil power only and a teflon-like coating is created on all surfaces thus protecting the sidewalls in the subsequent etch cycle. In the etch cycle the ion bombardment driven by the platen power ''first'' removes the passivation layer on the surfaces directly exposed to the ions (i.e. horizontal surfaces) ''then'' as the bottom of the structures are opened the etch itself starts. It is clear that one can distinguish two phases (at least) of the etch cycle; one where the ion bombardment removes the polymer and one where the actual etching takes place. | ||
Revision as of 08:24, 17 May 2011
Advantages of the DRIE-Pegasus
The DRIE-Pegasus takes the well established Bosch process known from the ASE a significant step further. In the ASE the Bosch process has two cycles, etch and passivation. Within each cycle the process parameters are kept constant (This is, at least, that is the intention - the reality is that the ideal square function is rarely achieved during process parameter changes). In the passivation cycle, a C4F8 plasma is formed using the RF coil power only and a teflon-like coating is created on all surfaces thus protecting the sidewalls in the subsequent etch cycle. In the etch cycle the ion bombardment driven by the platen power first removes the passivation layer on the surfaces directly exposed to the ions (i.e. horizontal surfaces) then as the bottom of the structures are opened the etch itself starts. It is clear that one can distinguish two phases (at least) of the etch cycle; one where the ion bombardment removes the polymer and one where the actual etching takes place.
Details on DRIE-Pegasus
Further info: