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Specific Process Knowledge/Etch/Titanium Oxide: Difference between revisions

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Hvje (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Hvje (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
45 edits
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Wet etch of Al
|Wet etch of TiO2 (ALD)
|Wet etch/removal: TMAH<br>
|
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
|Dry plasma etch of Al
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch.
|Sputtering of Al - pure physical etch.
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Etch rate range
!Etch rate range
|
|2,5 nm/min
*~60-100nm/min
|
|
*~30nm/min (pure Al)
*~30nm/min (pure Al)
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