Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions
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! | ! rowspan="2" align="center"| Etch rates | ||
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| Averages||311||104||92||105||116||169||108||79||101||66||91||98||59 | | Averages||311||104||92||105||116||169||108||79||101||66||91||98||59 | ||
Revision as of 20:59, 10 May 2011
Etching of nanostructures in silicon using the ICP Metal Etcher or DRIE Pegasus
- The 180 nm zep resist profiles (Wafer WF_2B1_feb06_2011)
- The 340 nm zep resist profiles (Wafer WF_2C1_feb2011)
- The 211 nm zep resist profiles (Wafer WF_2E02_mar23_2011)
| Recipe Sinano | 3.0 | 3.1 | 3.2 | 3.3 | 3.4 | 4.0 | 3.5 | 3.6 | 3.3 | 3.7 | 3.31 | 3.31 | 3.32 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Cl2 (sccm) | 0 | 0 | 0 | 0 | 0 | 20 | 15 | 15 | 0 | 0 | 0 | 0 | 0 |
| BCl3 (sccm) | 5 | 3 | 5 | 5 | 5 | 0 | 5 | 5 | 5 | 5 | 5 | 5 | 5 |
| HBr (sccm) | 15 | 17 | 15 | 15 | 15 | 0 | 0 | 0 | 15 | 15 | 15 | 15 | 15 |
| Coil power (W) | 900 L | 900 F | 900 F | 900 F | 900 F | 900 L | 900 L | 900 F | 900 F | 900 L | 900 F | 900 F | 900 F |
| Platen power (W) | 50 | 50 | 60 | 75 | 90 | 60 | 60 | 60 | 75 | 60 | 75 | 75 | 30 |
| Pressure (mtorr) | 2 | 2 | 2 | 2 | 2 | 2 | 5 | 10 | 2 | 10 | 2 | 2 | 2 |
| Temperature (oC) | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 50 | 50 | 50 | 50 |
| Spacers (mm) | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 30 | 100 |
| Process time (s) | 150 | 180 | 120 | 180 | 120 | 90 | 120 | 180 | 300 | 180 | 180 | 180 | 180 |
| Etch rates (nm/min) | |||||||||||||
| Averages | 311 | 104 | 92 | 105 | 116 | 169 | 108 | 79 | 101 | 66 | 91 | 98 | 59 |
| Std. Dev | 44 | 15 | 15 | 21 | 22 | 9 | 11 | 31 | 29 | 4 | 28 | 18 | 12 |
| Zep etch rate (nm/min) | |||||||||||||
| 30 | 40 | 51 | 67 | 45 | 59 | 53 | 36 | 19 | |||||
| Sidewall angle (degrees) | |||||||||||||
| Averages | 82 | 82 | 82 | 82 | 82 | 84 | 81 | 83 | 83 | 85 | 80 | 83 | 79 |
| Std. Dev | 2 | 2 | 1 | 1 | 1 | 1 | 1 | 2 | 2 | 1 | 3 | 2 | 2 |
| CD loss (nm pr edge) | |||||||||||||
| Averages | 65 | -11 | -15 | -2 | -11 | 67 | 63 | -29 | -5 | -29 | 10 | -14 | -17 |
| Std. Dev | 30 | 5 | 2 | 4 | 3 | 29 | 27 | 6 | 5 | 8 | 7 | 8 | 10 |
| Bowing (nm) | |||||||||||||
| Averages | 31 | 31 | 15 | 6 | 5 | 22 | 12 | 15 | 28 | 13 | 25 | 1 | -2 |
| Std. Dev | 6 | 7 | 3 | 6 | 4 | 5 | 2 | 6 | 9 | 7 | 5 | 2 | 2 |
| Botton curvature | |||||||||||||
| Averages | -9 | -6 | -9 | -11 | -9 | 9 | -4 | -8 | -24 | -2 | -9 | -13 | -10 |
| Std. Dev | 22 | 19 | 19 | 11 | 7 | 17 | 15 | 15 | 12 | 15 | 13 | 17 | 18 |
| Recipe Sinano | 3.0 | 3.1 | 3.2 | 3.3 | 3.4 | 4.0 | 3.5 | 3.6 | 3.3 | 3.7 | 3.31 | 3.31 | 3.32 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Etch rates | (nm/min) | ||||||||||||
| Averages | 311 | 104 | 92 | 105 | 116 | 169 | 108 | 79 | 101 | 66 | 91 | 98 | 59 |
| Std. Dev | 44 | 15 | 15 | 21 | 22 | 9 | 11 | 31 | 29 | 4 | 28 | 18 | 12 |
| Zep etch rate (nm/min) | |||||||||||||
| 30 | 40 | 51 | 67 | 45 | 59 | 53 | 36 | 19 | |||||
| Sidewall angle (degrees) | |||||||||||||
| Averages | 82 | 82 | 82 | 82 | 82 | 84 | 81 | 83 | 83 | 85 | 80 | 83 | 79 |
| Std. Dev | 2 | 2 | 1 | 1 | 1 | 1 | 1 | 2 | 2 | 1 | 3 | 2 | 2 |
| CD loss (nm pr edge) | |||||||||||||
| Averages | 65 | -11 | -15 | -2 | -11 | 67 | 63 | -29 | -5 | -29 | 10 | -14 | -17 |
| Std. Dev | 30 | 5 | 2 | 4 | 3 | 29 | 27 | 6 | 5 | 8 | 7 | 8 | 10 |
| Bowing (nm) | |||||||||||||
| Averages | 31 | 31 | 15 | 6 | 5 | 22 | 12 | 15 | 28 | 13 | 25 | 1 | -2 |
| Std. Dev | 6 | 7 | 3 | 6 | 4 | 5 | 2 | 6 | 9 | 7 | 5 | 2 | 2 |
| Botton curvature | |||||||||||||
| Averages | -9 | -6 | -9 | -11 | -9 | 9 | -4 | -8 | -24 | -2 | -9 | -13 | -10 |
| Std. Dev | 22 | 19 | 19 | 11 | 7 | 17 | 15 | 15 | 12 | 15 | 13 | 17 | 18 |