Specific Process Knowledge/Lithography/nLOF: Difference between revisions
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These problems were largely solved by increasing the PEB time to 120 s. Tests (on Aligner: Maskless 02) have shown that the lithographic performance of nLOF on Si is improved when using 120 s @ 110°C PEB (less stitching, less bias, more negative profile). | These problems were largely solved by increasing the PEB time to 120 s. Tests (on Aligner: Maskless 02) have shown that the lithographic performance of nLOF on Si is improved when using 120 s @ 110°C PEB (less stitching, less bias, more negative profile). | ||
A small report on the tests can be found here: | A small report on the tests can be found here: [[media:nLOF_PEBtime_2019.pdf|'''nLOF PEB time 2019''']]. | ||
==Development== | ==Development== | ||