Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch using HF: Difference between revisions
Added section about photoresist adhesion |
m →Photoresist adhesion: formatting |
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* Cycles: 500 and 1000 | * Cycles: 500 and 1000 | ||
* Temperature: 200°C | |||
* TMA pulse: 0.1s | * TMA pulse: 0.1s | ||
* H2O pulse: 0.1s | * H2O pulse: 0.1s | ||