Specific Process Knowledge/Etch/Lithium niobate: Difference between revisions
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|Sputtering of Lithium niobate - pure physical etch | |Sputtering of Lithium niobate - pure physical etch | ||
| | This is the dryetcher we prefer you use for Lithium niobate etching as lithium does not form any volatile etch products. You can assist it with CHF3 if you want that. | ||
|This is an ICP and is for etching materials that forms volatile etch products with fluorine chemistry. We have allowed some lithium niobate etching to be done in this machine but we are not super happy with that since there will be redeposition inside the chamber. Please talk to us about it if you can to do it. | |||
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**~20nm/min | **~20nm/min | ||
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* | *Depending on features size and etch load and recipe settings. We have not recipe for this - you are on your own. | ||
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**Anisotropic (angles sidewalls, typical around 70 dg) | **Anisotropic (angles sidewalls, typical around 70 dg) | ||
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*Anisotropic | *Anisotropic - expect angles sidewalls. | ||
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*smaller pieces on a carrier wafer | *smaller pieces on a carrier wafer | ||
*<nowiki>#</nowiki>1 | *<nowiki>#</nowiki>1 100 mm wafer | ||
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*Silicon oxide | *Silicon oxide | ||
*Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
* | *Less than 4 cm2 of many other materials, check out the cross contamination sheet in LabManager | ||
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