Specific Process Knowledge/Etch/Lithium niobate

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Etching of Titanium

Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.

• Etching of Ti by wet etch
• Etching of Ti by dry etch
• Sputtering of Ti

Comparison of Titanium Etch Methodes

		IBE (Ionfab300+)	ICP metal
Generel description		Sputtering of Ti - pure physical etch	Dry plasma etch of Ti
Etch rate range		~20nm/min	~50-200 nm/min (depending on features size and etch load and recipe settings)
Etch profile		Anisotropic (angles sidewalls, typical around 70 dg)	Anisotropic (vertical sidewalls)
Substrate size		Smaller pieces glued to carrier wafer #1 50mm wafer #1 100mm wafer #1 150mm wafer #1 200mm wafer	smaller pieces on a carrier wafer #1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer) #1 150mm wafers
Allowed materials		Silicon Silicon oxides Silicon nitrides Metals from the +list Metals from the -list Alloys from the above list Stainless steel Glass III-V materials Resists Polymers Capton tape	Silicon Quartz/fused silica Photoresist/e-beam resist PolySilicon, Silicon oxide Silicon (oxy)nitride Aluminium Titanium Chromium