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Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.

	ICP metal	IBE (Ionfab300+)
Generel description	Dry plasma etch of Ti	Sputtering of Ti - pure physical etch
Etch rate range	~50-200 nm/min (depending on features size and etch load and recipe settings)	~20nm/min
Etch profile	Anisotropic (vertical sidewalls)	Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size	smaller pieces on a carrier wafer #1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer) #1 150mm wafers	Smaller pieces glued to carrier wafer #1 50mm wafer #1 100mm wafer #1 150mm wafer #1 200mm wafer
Allowed materials	Silicon Quartz/fused silica Photoresist/e-beam resist PolySilicon, Silicon oxide Silicon (oxy)nitride Aluminium Titanium Chromium	Silicon Silicon oxides Silicon nitrides Metals from the +list Metals from the -list Alloys from the above list Stainless steel Glass III-V materials Resists Polymers Capton tape

@@ Line 23: / Line 23: @@
 |-style="background:silver; color:black"
 !
-![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 1]]
+!
-![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 2]]
+!
 ![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
 ![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
@@ Line 32: / Line 32: @@
 |-style="background:WhiteSmoke; color:black"
 !Generel description
-|BHF Etch of titanium with or without photoresist mask.
+|
-|Cold RCA1 mix etch of titanium (as stripper or with eagle resist).
+|
 |Dry plasma etch of Ti
 |Sputtering of Ti - pure physical etch
@@ Line 42: / Line 42: @@
 !Etch rate range
 |
-*~?nm/min
+*
 |
-*~?nm/min
+*
 |
 *~50-200 nm/min (depending on features size and etch load and recipe settings)
@@ Line 55: / Line 55: @@
 !Etch profile
 |
-*Isotropic
+*
 |
-*Isotropic
+*
 |
 *Anisotropic (vertical sidewalls)
@@ Line 69: / Line 69: @@
 !Substrate size
 |
-*Any size and number that can go inside the beaker in use
+*
 |
-*Any size and number that can go inside the beaker in use
+*
 |
 *smaller pieces on a carrier wafer
@@ Line 88: / Line 88: @@
 !'''Allowed materials'''
 |
-No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
 |
-No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
 |
 *Silicon