Specific Process Knowledge/Etch/Lithium niobate: Difference between revisions
Created page with "sdddd" |
No edit summary |
||
| Line 1: | Line 1: | ||
sdddd | sdddd | ||
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.''' | |||
'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.''' | |||
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Titanium click here]''' | |||
<!--Page reviewed by jmli 1/8-2016 --> | |||
==Etching of Titanium== | |||
Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions. | |||
*[[Specific Process Knowledge/Etch/Wet Titanium Etch|Etching of Ti by wet etch]] | |||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium|Etching of Ti by dry etch]] | |||
*[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch|Sputtering of Ti]] | |||
<br clear="all" /> | |||
==Comparison of Titanium Etch Methodes== | |||
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | |||
|- | |||
|- | |||
|-style="background:silver; color:black" | |||
! | |||
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 1]] | |||
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 2]] | |||
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]] | |||
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | |||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Generel description | |||
|BHF Etch of titanium with or without photoresist mask. | |||
|Cold RCA1 mix etch of titanium (as stripper or with eagle resist). | |||
|Dry plasma etch of Ti | |||
|Sputtering of Ti - pure physical etch | |||
|- | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!Etch rate range | |||
| | |||
*~?nm/min | |||
| | |||
*~?nm/min | |||
| | |||
*~50-200 nm/min (depending on features size and etch load and recipe settings) | |||
| | |||
*~20nm/min | |||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Etch profile | |||
| | |||
*Isotropic | |||
| | |||
*Isotropic | |||
| | |||
*Anisotropic (vertical sidewalls) | |||
| | |||
*Anisotropic (angles sidewalls, typical around 70 dg) | |||
|- | |||
|- | |||
|-style="background:LightGrey; color:black" | |||
!Substrate size | |||
| | |||
*Any size and number that can go inside the beaker in use | |||
| | |||
*Any size and number that can go inside the beaker in use | |||
| | |||
*smaller pieces on a carrier wafer | |||
*<nowiki>#</nowiki>1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer) | |||
*<nowiki>#</nowiki>1 150mm wafers | |||
| | |||
Smaller pieces glued to carrier wafer | |||
*<nowiki>#</nowiki>1 50mm wafer | |||
*<nowiki>#</nowiki>1 100mm wafer | |||
*<nowiki>#</nowiki>1 150mm wafer | |||
*<nowiki>#</nowiki>1 200mm wafer | |||
|- | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!'''Allowed materials''' | |||
| | |||
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals | |||
| | |||
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals | |||
| | |||
*Silicon | |||
*Quartz/fused silica | |||
*Photoresist/e-beam resist | |||
*PolySilicon, | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Aluminium | |||
*Titanium | |||
*Chromium | |||
| | |||
*Silicon | |||
*Silicon oxides | |||
*Silicon nitrides | |||
*Metals from the +list | |||
*Metals from the -list | |||
*Alloys from the above list | |||
*Stainless steel | |||
*Glass | |||
*III-V materials | |||
*Resists | |||
*Polymers | |||
*Capton tape | |||
|- | |||
|} | |||