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| *Graphene requires special treatment | | *Graphene requires special treatment |
| | Any standard cleanroom material | | | Any standard cleanroom material |
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| |}
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| <br clear="all" />
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| {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
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| |-style="background:silver; color:black"
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| !width="10%"|
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| !width="16%"| [[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]]
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| !width="16%"| [[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]]
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| !width="16%"| [[Specific Process Knowledge/Lithography/EBeamLithography|E-beam Lithography]]
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| !width="16%"| [[Specific_Process_Knowledge/Imprinting|Nano Imprint Lithography]]
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| |-
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| |-
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| |-style="background:WhiteSmoke; color:black"
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| !Generel description
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| |Pattern transfer via ultraviolet (UV) light
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| |Pattern transfer via deep ultraviolet (DUV) light
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| |Patterning by electron beam
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| |Pattern transfer via hot embossing (HE)
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| |-style="background:LightGrey; color:black"
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| !Pattern size range
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| ~0.6 µm and up<br>
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| (resist type, thickness, and pattern dependent)
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| ~200 nm and up<br>
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| (pattern type, shape and pitch dependent)
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| ~12 nm - 1 µm<br>
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| (and larger at high currents)
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| ~20 nm and up
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| |-
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| |-style="background:WhiteSmoke; color:black"
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| !Resist type
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| UV sensitive:
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| *AZ 5214E, AZ 4562, AZ MiR 701 (positive)
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| *AZ 5214E, AZ nLOF 2020, SU-8 (negative)
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| DUV sensitive
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| *JSR KRF M230Y, JSR KRF M35G (positive)
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| *UVN2300-0.8 (negative)
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| E-beam sensitive
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| *AR-P6200 CSAR, ZEP502A , PMMA (positive)
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| *HSQ, mr-EBL, AR-N 7520 (negative)
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| Imprint polymers:
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| *Topas
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| *PMMA
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| *mr-I 7030R
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|
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| |-style="background:LightGrey; color:black"
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| !Resist thickness range
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| ~0.5 µm to 200 µm
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| ~50 nm to 2 µm
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| ~30 nm to 1 µm
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| ~ 100 nm to 2 µm
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| |-style="background:WhiteSmoke; color:black"
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| !Typical exposure time
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| 10 s - 3 min pr. wafer using mask aligners<br>
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| 10 min - 5 hours pr. wafer using maskless aligners
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| Process dependent:
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| *Pattern
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| *Pattern area
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| *Dose
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| Throughput is up to 60 wafers/hour
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| Process dependent:
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| *Dose, Q [µC/cm<sup>2</sup>]
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| *Beam current, I [A]
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| *Pattern area, a [cm<sup>2</sup>]
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|
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| time [s] = Q*a/I
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| Process dependent, including heating/cooling rates
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| |-style="background:LightGrey; color:black"
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| !Substrate size
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| *chips down to 3 mm x 3 mm
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| *50 mm wafers
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| *100 mm wafers
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| *150 mm wafers
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| *200 mm wafers
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| *100 mm wafers
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| *150 mm wafers
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| *200 mm wafers
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| We have cassettes fitting:
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| *4 small samples (slit openings: 20mm, 12mm, 8mm, 4mm)
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| *6 wafers of 50 mm in size
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| *3 wafers of 100 mm in size
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| *1 wafer of 150 mm in size
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| *1 wafer of 200 mm in size
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| Only one cassette can be loaded at a time
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| *small samples
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| *50 mm wafers
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| *100 mm wafers
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| *150 mm wafers
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| |-
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|
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| |-style="background:WhiteSmoke; color:black"
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| !'''Allowed materials'''
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| Any standard cleanroom material
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| Any standard cleanroom material
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| Any standard cleanroom material, except:
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| *Materials that will degas
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| *Graphene requires special treatment
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| Any standard cleanroom material
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| |- | | |- |
| |} | | |} |
