Specific Process Knowledge/Lithography: Difference between revisions

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 =Comparing lithography methods at DTU Nanolab=
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+|-
+!  !! [[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]] !! [[Specific Process Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]] !! [[Specific Process Knowledge/Lithography/EBeamLithography|E-beam Lithography]] !! [[Specific_Process_Knowledge/Imprinting|Nano Imprint Lithography]]
+|-
+! scope=row style="text-align: left;" | Generel description
+| Pattern transfer via ultraviolet (UV) light || Pattern transfer via deep ultraviolet (DUV) light || Patterning by electron beam || Pattern transfer via hot embossing (HE)
+|-
+! scope=row style="text-align: left;" | Pattern size range
+| ~1 µm and up<br>(resist type, thickness, and pattern dependent) || ~200 nm and up<br>(pattern type, shape and pitch dependent) || ~10-1000 nm<br>(and larger at high currents) || ~20 nm and up
+|-
+! scope=row style="text-align: left;" | Resist type
+|
+UV sensitive:
+*AZ 5214E, AZ 4562, AZ MiR 701 (positive)
+*AZ 5214E, AZ nLOF 2020, SU-8 (negative)
+|
+DUV sensitive:
+*JSR KRF M230Y, JSR KRF M35G (positive)
+*UVN2300-0.8 (negative)
+|
+E-beam sensitive:
+*AR-P6200 CSAR, ZEP502A , PMMA (positive)
+*HSQ, mr-EBL, AR-N 7520 (negative)
+|
+Imprint polymers:
+*Topas
+*PMMA
+*mr-I 7030R
+|-
+! scope=row style="text-align: left;" | Resist thickness range
+| ~0.5 µm to 200 µm || ~50 nm to 2 µm || ~30 nm to 1 µm || ~100 nm to 2 µm
+|-
+! scope=row style="text-align: left;" | Typical exposure time
+| Mask aligner: 10-180 s per wafer<br>Maskless aligner: 5-60 minutes per wafer
+|
+Process dependent:
+*Pattern
+*Pattern area
+*Dose
+Throughput is up to 60 wafers/hour
+|
+Process dependent:
+*Dose, <math>Q</math> [µC/cm<sup>2</sup>]
+*Beam current, <math>I</math> [A]
+*Pattern area, <math>a</math> [cm<sup>2</sup>]
+Process time <math>t = \frac{Q \sdot a}{I}</math>
+| Process dependent, including heating/cooling rates
+|-
+! scope=row style="text-align: left;" | Substrate size
+|
+*chips down to 3 mm x 3 mm
+*50 mm wafers
+*100 mm wafers
+*150 mm wafers
+*200 mm wafers
+|
+*100 mm wafers
+*150 mm wafers
+*200 mm wafers
+|
+We have cassettes fitting:
+*4 small samples (slit openings: 20mm, 12mm, 8mm, 4mm)
+*6 wafers of 50 mm in size
+*3 wafers of 100 mm in size
+*1 wafer of 150 mm in size
+*1 wafer of 200 mm in size
+Only one cassette can be loaded at a time
+|
+*small samples
+*50 mm wafers
+*100 mm wafers
+*150 mm wafers
+|-
+! scope=row style="text-align: left;" | Allowed materials
+| Any standard cleanroom material
+| Any standard cleanroom material
+|
+Any standard cleanroom material, except:
+*Materials that will degas
+*Graphene requires special treatment
+| Any standard cleanroom material
+|-
+|}
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