Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 04 processing: Difference between revisions
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=Exposure technology= | =Exposure technology= | ||
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Aligner: Maskless 04 is both a direct writer and not a direct laser writer. In Raster mode, it works like MLA 1, where an image is projected onto the substrate surface, and stepped across the substrate in order to produce the entire pattern. In Vector mode, it is a direct laser writer, where a focused laser beam is moved across the substrate surface in order to trace out the pattern. | Aligner: Maskless 04 is both a direct writer and not a direct laser writer. In Raster mode, it works like MLA 1, where an image is projected onto the substrate surface, and stepped across the substrate in order to produce the entire pattern. In Vector mode, it is a direct laser writer, where a focused laser beam is moved across the substrate surface in order to trace out the pattern. | ||
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=Process Parameters= | =Process Parameters= | ||
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Control of the exposure dose differs between the two available exposure modes. In Raster mode, the dose is directly controlled by the on-time of the DMD mirrors during exposure, and the dose process parameter is thus simply given in units of mJ/cm<sup>2</sup>. As the intensity of the exposure light at the substrate surface cannot easily be measured, this dose is indirectly calibrated at the factory, by adjusting the optimal dose to match the known dose of a particular resist. | Control of the exposure dose differs between the two available exposure modes. In Raster mode, the dose is directly controlled by the on-time of the DMD mirrors during exposure, and the dose process parameter is thus simply given in units of mJ/cm<sup>2</sup>. As the intensity of the exposure light at the substrate surface cannot easily be measured, this dose is indirectly calibrated at the factory, by adjusting the optimal dose to match the known dose of a particular resist. | ||
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=Substrate positioning= | =Substrate positioning= | ||
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During load, the machine will focus on the surface of the sample. Then, using the automatic focusing system, it will detect the edges of the sample (this function depends on the substrate template used) in order to determine the center and rotation of the sample. The following results rapport findings using the "Wafer (d=100 mm; Flat)" template on a standard 100mm Si substrate. | During load, the machine will focus on the surface of the sample. Then, using the automatic focusing system, it will detect the edges of the sample (this function depends on the substrate template used) in order to determine the center and rotation of the sample. The following results rapport findings using the "Wafer (d=100 mm; Flat)" template on a standard 100mm Si substrate. | ||
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=Alignment= | =Alignment= | ||
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The alignment accuracy of the Aligner: Maskless 04 is a combination of the position accuracy of the stage, the accuracy of the alignment mark detection, and the distortion of the pattern already on the wafer (first print). The alignment specification of the machine is 1µm for both raster and vector mode, which was demonstrated in the factory acceptance test and the site acceptance test after installation. | The alignment accuracy of the Aligner: Maskless 04 is a combination of the position accuracy of the stage, the accuracy of the alignment mark detection, and the distortion of the pattern already on the wafer (first print). The alignment specification of the machine is 1µm for both raster and vector mode, which was demonstrated in the factory acceptance test and the site acceptance test after installation. | ||
<br>An alignment test performed shortly after installation, using a 3x3 array of structures with 30mm pitch, showed an alignment error of 0.29±0.18µm in X and -0.49±0.23µm in Y (Raster mode). | <br>An alignment test performed shortly after installation, using a 3x3 array of structures with 30mm pitch, showed an alignment error of 0.29±0.18µm in X and -0.49±0.23µm in Y (Raster mode). | ||