Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

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| Etch rates (nm/min)||||||||||||||||||||||||||
| Etch rates (nm/min)||||||||||||||||||||||||||
|-
|-
| Averages||311||104||92||105||116||169||108||79||101||66||91||98||59
! Averages||311||104||92||105||116||169||108||79||101||66||91||98||59
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|-
| Std. Dev||44||15||15||21||22||9||11||31||29||4||28||18||12
! Std. Dev||44||15||15||21||22||9||11||31||29||4||28||18||12
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|-
| Sidewall angle (degrees)||||||||||||||||||||||||||
! Sidewall angle (degrees)||||||||||||||||||||||||||
|-
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| Averages||82||82||82||82||82||84||81||83||83||85||80||83||79
! Averages||82||82||82||82||82||84||81||83||83||85||80||83||79
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| Std. Dev||2||2||1||1||1||1||1||2||2||1||3||2||2
! Std. Dev||2||2||1||1||1||1||1||2||2||1||3||2||2
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| CD loss (nm pr edge)||||||||||||||||||||||||||
! CD loss (nm pr edge)||||||||||||||||||||||||||
|-
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| Averages||65||-11||-15||-2||-11||67||63||-29||-5||-29||10||-14||-17
! Averages||65||-11||-15||-2||-11||67||63||-29||-5||-29||10||-14||-17
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| Std. Dev||30||5||2||4||3||29||27||6||5||8||7||8||10
! Std. Dev||30||5||2||4||3||29||27||6||5||8||7||8||10
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| Bowing (nm)||||||||||||||||||||||||||
| Bowing (nm)||||||||||||||||||||||||||

Revision as of 09:39, 10 May 2011

Etching of nanostructures in silicon using the ICP Metal Etcher or DRIE Pegasus


Recipe Sinano 3.0 3.1 3.2 3.3 3.4 4.0 3.5 3.6 3.3 3.7 3.31 3.31 3.32
Cl2 (sccm) 0 0 0 0 0 20 15 15 0 0 0 0 0
BCl3 (sccm) 5 3 5 5 5 0 5 5 5 5 5 5 5
HBr (sccm) 15 17 15 15 15 0 0 0 15 15 15 15 15
Coil power (W) 900 L 900 F 900 F 900 F 900 F 900 L 900 L 900 F 900 F 900 L 900 F 900 F 900 F
Platen power (W) 50 50 60 75 90 60 60 60 75 60 75 75 30
Pressure (mtorr) 2 2 2 2 2 2 5 10 2 10 2 2 2
Temperature (oC) 20 20 20 20 20 20 20 20 20 50 50 50 50
Spacers (mm) 100 100 100 100 100 100 100 100 100 100 100 30 100
Process time (s) 150 180 120 180 120 90 120 180 300 180 180 180 180
Etch rates (nm/min)
Averages 311 104 92 105 116 169 108 79 101 66 91 98 59
Std. Dev 44 15 15 21 22 9 11 31 29 4 28 18 12
Sidewall angle (degrees)
Averages 82 82 82 82 82 84 81 83 83 85 80 83 79
Std. Dev 2 2 1 1 1 1 1 2 2 1 3 2 2
CD loss (nm pr edge)
Averages 65 -11 -15 -2 -11 67 63 -29 -5 -29 10 -14 -17
Std. Dev 30 5 2 4 3 29 27 6 5 8 7 8 10
Bowing (nm)
Averages 31 31 15 6 5 22 12 15 28 13 25 1 -2
Std. Dev 6 7 3 6 4 5 2 6 9 7 5 2 2
Botton curvature
Averages -9 -6 -9 -11 -9 9 -4 -8 -24 -2 -9 -13 -10
Std. Dev 22 19 19 11 7 17 15 15 12 15 13 17 18


Nominal line width Etched depths (nm)
30 nm 198 231 147 214 163 227 185 170 295
60 nm 256 308 181 305 229 253 191 185 411
90 nm 259 335 195 342 255 251 222 253 566
120 nm 277 346 203 357 262 257 221 278 600
150 nm 269 341 205 369 265 262 225 280 647
Nominal line width Etch rates in trenches (nm/min)
30 nm 79 77 74 71 82 151 93 57 59
60 nm 102 103 91 102 115 169 96 62 82
90 nm 104 112 98 114 128 167 111 84 113
120 nm 111 115 102 119 131 171 111 93 120
150 nm 108 114 103 123 133 175 113 93 129
zep mask parameters
start (end) 110 (64) 178 (96) 180 (110) 180 (64) 180 (72) 110 (43) 110 (34) 180 (64) 348 (53)
zep etch rate (nm/min) 18 27 35 39 54 45 38 39 59


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