Specific Process Knowledge/Lithography/Strip: Difference between revisions

@@ Line 420: / Line 420: @@
 {| class="wikitable"
 |-
-! Test setup !! Single substrate
+!  !! Single substrate
 |-
-! scope=row| Test results
+! scope=row style="text-align: left;" | Test results
 | Ashing rate follows power
 |-
-! scope=row| Wafers
+! scope=row style="text-align: left;" | Wafers
 | 1
 |-
-! scope=row| Wafer size
+! scope=row style="text-align: left;" | Wafer size
 | 100 mm
 |-
-! scope=row| Boat position
+! scope=row style="text-align: left;" | Boat position
 | Center of chamber
 |-
-! scope=row| Test wafer position
+! scope=row style="text-align: left;" | Test wafer position
 | Center of boat
 |-
-! scope=row| Total gas flow rate
+! scope=row style="text-align: left;" | Total gas flow rate
 | 200 sccm
 |-
-! scope=row| Gas mix ratio
+! scope=row style="text-align: left;" | Gas mix ratio
 | 30% N<sub>2</sub>
 |-
-! scope=row| Chamber pressure
+! scope=row style="text-align: left;" | Chamber pressure
 | 1.3 mbar
 |-
-! scope=row| Power
+! scope=row style="text-align: left;" | Power
 | Tested parameter
 |-
-! scope=row| Test processing time
+! scope=row style="text-align: left;" | Test processing time
 | 2 minutes
 |-
-! scope=row| Test average temperature
+! scope=row style="text-align: left;" | Test average temperature
 | 40°C
 |}