Specific Process Knowledge/Etch/ICP Metal Etcher

Etching of nanostructures in silicon using the ICP Metal Etcher or DRIE Pegasus

• The 180 nm zep resist profiles (Wafer WF_2B1_feb06_2011)
• The 340 nm zep resist profiles (Wafer WF_2C1_feb2011)
• The 211 nm zep resist profiles (Wafer WF_2E02_mar23_2011)

Recipe Sinano	3.0	3.1	3.2	3.3	3.4	4.0	3.5	3.6	3.3	3.7	3.31	3.31	3.32
Cl2 (sccm)	0	0	0	0	0	20	15	15	0	0	0	0	0
BCl3 (sccm)	5	3	5	5	5	0	5	5	5	5	5	5	5
HBr (sccm)	15	17	15	15	15	0	0	0	15	15	15	15	15
Coil power (W)	900 L	900 F	900 F	900 F	900 F	900 L	900 L	900 F	900 F	900 L	900 F	900 F	900 F
Platen power (W)	50	50	60	75	90	60	60	60	75	60	75	75	30
Pressure (mtorr)	2	2	2	2	2	2	5	10	2	10	2	2	2
Temperature (oC)	20	20	20	20	20	20	20	20	20	50	50	50	50
Spacers (mm)	100	100	100	100	100	100	100	100	100	100	100	30	100
Process time (s)	150	180	120	180	120	90	120	180	300	180	180	180	180
Etch rates (nm)
Averages	311	104	92	105	116	169	108	79	101	66	91	98	59
Std. Dev.	44	15	15	21	22	9	11	31	29	4	28	18	12
Sidewall angle (degrees)
Averages	82	82	82	82	82	84	81	83	83	85	80	83	79
Std. Dev	2	2	1	1	1	1	1	2	2	1	3	2	2
CD loss (nm pr edge)
Averages	65
67	63
10
Std. Dev	30	5	2	4	3	29	27	6	5	8	7	8	10

Nominal line width	Etched depths (nm)
30 nm	198	231	147	214	163	227	185	170	295
60 nm	256	308	181	305	229	253	191	185	411
90 nm	259	335	195	342	255	251	222	253	566
120 nm	277	346	203	357	262	257	221	278	600
150 nm	269	341	205	369	265	262	225	280	647
Nominal line width	Etch rates in trenches (nm/min)
30 nm	79	77	74	71	82	151	93	57	59
60 nm	102	103	91	102	115	169	96	62	82
90 nm	104	112	98	114	128	167	111	84	113
120 nm	111	115	102	119	131	171	111	93	120
150 nm	108	114	103	123	133	175	113	93	129
	zep mask parameters
start (end)	110 (64)	178 (96)	180 (110)	180 (64)	180 (72)	110 (43)	110 (34)	180 (64)	348 (53)
zep etch rate (nm/min)	18	27	35	39	54	45	38	39	59

• Nanoetch on DRIE-Pegasus
• 1 - the first nanoetch