Specific Process Knowledge/Lithography/Strip: Difference between revisions
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Pressure: 0.2-0.8 mbar<br> | Pressure: 0.2-0.8 mbar<br> | ||
Gas: 45 sccm O<sub>2</sub><br> | Gas: 45 sccm O<sub>2</sub><br> | ||
Power: 100%<br> | Power: 100 W (100%)<br> | ||
Time: 1 -10 minutes (depending on photoresist type and thickness)<br> | Time: 1 -10 minutes (depending on photoresist type and thickness)<br> | ||