Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
No edit summary
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
No edit summary
Line 99: Line 99:
|120
|120
|-
|-
! Nominal line width
! colspan="9" align="center"| Etch rates (nm/min)
! colspan="9" align="center"| Etched depths (nm)
|-
|-
! 30 nm
| Averages||295||228||299||235||183||183||166||160||148||0||0||0||0
|
|
|
|
|
|
|
|
|
|-
|-
!60 nm
| Std. Dev||36||29||37||20||9||9||9||8||6||0||0||0||0
|
|
|
|
|
|
|
|
|
|-
|-
!90 nm
! colspan="9" align="center"| Sidewall angle (degrees)
|
|
|
|
|
|
|
|
|
|-
|-
!120 nm
| Averages||93||94||92||94||91||91||90||90||90||0||0||0||0
|
|
|
|
|
|
|
|
|
|-
|-
!150 nm
| Std. Dev||1||1||0||1||0||0||1||0||0||0||0||0||0
|
|
|
|
|
|
|
|
|
|-
|-
! Nominal line width
! colspan="9" align="center"| CD loss (nm pr edge)
! colspan="9" align="center"| Etch rates in trenches (nm/min)
|-
|-
!30 nm
| Averages||-11||-13||-17||-10||-10||-10||-20||-13||-24||0||0||0||0
|
|
|
|
|
|
|
|
|
|-
|-
!60 nm
| Std. Dev||12||10||11||14||15||15||16||15||21||0||0||0||0
|
|
|
|
|
|
|
|
|
|-
|-
!90 nm
|! colspan="9" align="center"| Bowing (nm)
|
|
|
|
|
|
|
|
|
|-
|-
!120 nm
| Averages||31||42||13||16||6||6||3||-3||0||0||0||0||0
|
|
|
|
|
|
|
|
|
|-
|-
!150 nm
| Std. Dev||7||6||4||3||2||2||2||3||1||0||0||0||0
|
|
|
|
|
|
|
|
|
|-
|-
|
! colspan="9" align="center"| Botton curvature
! colspan="9" align="center"| Etch rates in zep resist (nm/min)
|-
|-
! One point on wafer
| Averages||-45||-45||-44||-43||-32||-32||-34||-32||-39||0||0||0||0
|
|-
|
| Std. Dev||5||7||4||9||10||10||9||8||9||0||0||0||0
|
|
|
|
|
|
|
|-
|-
! Images
! Images

Revision as of 09:56, 10 May 2011

Recipe nano1.0 nano1.1 nano1.2 nano1.3 nano1.21 nano1.4 nano1.41 nano1.42 nano1.43
C4F8 (sccm) 52 52 52 52 75 75 75 75 75
SF6 (sccm) 38 38 38 38 38 38 38 38 38
O2 (sccm) 0 0 0 0 0 0 0 0 0
Coil power (W) 800 (forward) 600 (forward) 800 (forward) 600 (forward) 800 (forward) 800 (forward) 800 (forward) 800 (forward) 800 (forward)
Platen power (W) 50 50 50 40 50 50 75 40 30
Pressure (mtorr) 4 4 4 4 4 4 4 4 4
Temperature (degs C) 10 10 -10 -10 -10 -20 -20 -20 -20
Process time (s) 120 120 120 120 120 120 120 120 120
Etch rates (nm/min)
Averages 295 228 299 235 183 183 166 160 148 0 0 0 0
Std. Dev 36 29 37 20 9 9 9 8 6 0 0 0 0
Sidewall angle (degrees)
Averages 93 94 92 94 91 91 90 90 90 0 0 0 0
Std. Dev 1 1 0 1 0 0 1 0 0 0 0 0 0
CD loss (nm pr edge)
Averages -11 -13 -17 -10 -10 -10 -20 -13 -24 0 0 0 0
Std. Dev 12 10 11 14 15 15 16 15 21 0 0 0 0
Bowing (nm)
Averages 31 42 13 16 6 6 3 -3 0 0 0 0 0
Std. Dev 7 6 4 3 2 2 2 3 1 0 0 0 0
Botton curvature
Averages -45 -45 -44 -43 -32 -32 -34 -32 -39 0 0 0 0
Std. Dev 5 7 4 9 10 10 9 8 9 0 0 0 0
Images Images Images Images Images Images Images Images Images Images

The nanoetch

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch&oldid=5123"