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Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

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! Nominal line width
! colspan="9" align="center"| Etch rates (nm/min)
! colspan="9" align="center"| Etched depths (nm)
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! 30 nm
| Averages||295||228||299||235||183||183||166||160||148||0||0||0||0
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!60 nm
| Std. Dev||36||29||37||20||9||9||9||8||6||0||0||0||0
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!90 nm
! colspan="9" align="center"| Sidewall angle (degrees)
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!120 nm
| Averages||93||94||92||94||91||91||90||90||90||0||0||0||0
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!150 nm
| Std. Dev||1||1||0||1||0||0||1||0||0||0||0||0||0
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! Nominal line width
! colspan="9" align="center"| CD loss (nm pr edge)
! colspan="9" align="center"| Etch rates in trenches (nm/min)
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!30 nm
| Averages||-11||-13||-17||-10||-10||-10||-20||-13||-24||0||0||0||0
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!60 nm
| Std. Dev||12||10||11||14||15||15||16||15||21||0||0||0||0
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!90 nm
|! colspan="9" align="center"| Bowing (nm)
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!120 nm
| Averages||31||42||13||16||6||6||3||-3||0||0||0||0||0
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!150 nm
| Std. Dev||7||6||4||3||2||2||2||3||1||0||0||0||0
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! colspan="9" align="center"| Botton curvature
! colspan="9" align="center"| Etch rates in zep resist (nm/min)
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! One point on wafer
| Averages||-45||-45||-44||-43||-32||-32||-34||-32||-39||0||0||0||0
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| Std. Dev||5||7||4||9||10||10||9||8||9||0||0||0||0
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! Images
! Images
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch"