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Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium/End point: Difference between revisions

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==Etched too short==
==Etched too short==
{| class="wikitable"
|+
!Middel of the wafer
!Close to wafer edge
|-
|
<gallery caption="S047671 30 s barc etch, 7:00 min Cr etch, Feb-2025, wafer center, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="1">
File:S047671midt_cr_00.jpg
File:S047671midt_cr_03.jpg
File:S047671midt_cr_05.jpg
File:S047671midt_cr_08.jpg
File:S047671midt_cr_10.jpg
File:S047671midt_cr_11.jpg
File:S047671midt_cr_13.jpg
</gallery>
|
<gallery caption="S047671 30 s barc etch, 7:00 min Cr etch, Feb-2025, wafer edge, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="1">
File:S047671_edge_03.jpg
File:S047671_edge_01.jpg
File:S047671_edge_05.jpg
File:S047671_edge_08.jpg
File:S047671_edge_09.jpg
File:S047671_edge_10.jpg
File:S047671_edge_12.jpg
</gallery>
|}