Specific Process Knowledge/Lithography/Strip: Difference between revisions
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All substrate sizes seems to follow the same pattern; ashing rate increases with a higher percentage nitrogen in the gas mix and also with a higher chamber pressure. The total gas flow has only little influence on the ashing rate, but slightly favors the lower flow rate of 200 sccm, similar to previous experiment results. | All substrate sizes seems to follow the same pattern; ashing rate increases with a higher percentage nitrogen in the gas mix and also with a higher chamber pressure. The total gas flow has only little influence on the ashing rate, but slightly favors the lower flow rate of 200 sccm, similar to previous experiment results. | ||
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