Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Process gas flow rate for plasma asher 4 & 5== | ==Process gas flow rate for plasma asher 4 & 5== | ||
[[File:PA_flowRate_v4.png|320px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers. The green area covers the optimum range (~200 sccm) for both situations.|right]] | [[File:PA_flowRate_v4.png|320px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers. The green area covers the optimum range (~200 sccm) for both situations.|right]] | ||
The ashing rate is related to the total gas flow rate during processing. Process development tests found that 200 sccm gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates. | The ashing rate is related to the total gas flow rate during processing. Process development tests found that 200 sccm gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates. The experiments indicate that the gas flow rate has only a minor impact on the ashing rate. | ||
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate. | Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate. | ||