Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Comparison of ashing rate between substrate sizes for plasma asher 4 & 5== | ==Comparison of ashing rate between substrate sizes for plasma asher 4 & 5== | ||
[[File: | [[File:PA_comparison_v2.png|320px|thumb|Comparison of ashing rate with different sibstrate sizes. Process was done using a single substrate placed in the middle of the glass boat, which was placed in the center of the chamber.|right]] | ||
The ashing rate is slightly higher for 100 mm substrates, but there is no difference between a 150 mm wafer and a 200 mm wafer. | The ashing rate is slightly higher for 100 mm substrates, but there is no difference between a 150 mm wafer and a 200 mm wafer. | ||
All substrate sizes seems to follow the same pattern; ashing rate increases with a higher percentage nitrogen in the gas mix and also with a higher chamber pressure. | All substrate sizes seems to follow the same pattern; ashing rate increases with a higher percentage nitrogen in the gas mix and also with a higher chamber pressure. The total gas flow has only little influence on the ashing rate, but slightly favors the lower flow rate of 200 sccm. | ||
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