Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13

The nano1.3 recipe

Recipe nano1.3

Recipe	Gas	C4F8 38 sccm, SF6 52 sccm
	Pressure	4 mTorr, Strike 3 secs @ 15 mTorr
	Power	600 W CP, 40 W PP
	Temperature	-10 degs
	Hardware	100 mm Spacers
	Time	60 secs (a) and 120 secs (b)
Conditions	Run ID	(a) 1856 and (b) 1856+1857
	Conditioning	Sequence: Oxygen clean, processes, no oxygen between runs
	Mask	211 nm zep etched down 117 nm

• The results of the nano1.3 recipe
• 
  The 30 nm trenches after 60 secs.
• 
  The 60 nm trenches after 60 secs.
• 
  The 90 nm trenches after 60 secs.
• 
  The 120 nm trenches after 60 secs.
• 
  The 150 nm trenches after 60 secs.
• 
  The 30 nm trenches after 120 secs.
• 
  The 60 nm trenches after 120 secs.
• 
  The 90 nm trenches after 120 secs.
• 
  The 120 nm trenches after 120 secs.
• 
  The 150 nm trenches after 120 secs.

After 60 seconds

Nominal trench line width	'	30	60	90	120	150	Avg	Std
ER	nm/min	241	285	307	325	335	299	37
SA	degs	92	92	92	91	91	92	0
base	nm/edge	-5	-8	-18	-18	-34	-17	11
foot	nm/edge	-5	-8	-18	-18	-4	-10	7
Bowing		19	11	11	14	10	13	4
Curve		-48	-46	-43	-40	-40	-44	4
zep	nm/min						95

After 120 seconds

Nominal trench line width	'	30	60	90	120	150	Average	Std. dev.
ER	nm/min	189	195	229	241	242	219	25
SA	degs	95	93	93	93	94	94	1
base	nm/edge	0	4	-6	-26	-34	-13	17
foot	nm/edge	5	16	6	-12	-7	2	12
Bowing		27	12	30	22	30	24	7
Curve		-56	-54	-45	-40	-45	-48	7
zep	nm/min						81