Specific Process Knowledge/Lithography/Strip: Difference between revisions

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 Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
-'''Single substrate:'''<br>
+{| class="wikitable"
-Result: 30-80% nitrogen gives the highest ashing rate.
+|-
+!  !! Single substrate !! Full boat
+|-
+! scope=row| Test results
+| Highest ashing rate at 30-80% Nitrogen || Highest ashing rate at 50-70% Nitrogen
+|-
+! scope=row| Wafers
+| 1 || 25
+|-
+! scope=row| Wafer size
+| 100 mm || 100 mm
+|-
+! scope=row| Boat position
+| Center of chamber || Center of chamber
+|-
+! scope=row| Test wafer position
+| Center of boat || Center of boat
+|-
+! scope=row| Total gas flow rate
+| 500 || 200
+|-
+! scope=row| Gas mix ratio
+| Tested parameter || Tested parameter
+|-
+! scope=row| Chamber pressure
+| 1.25 mbar || 1.3 mbar
+|-
+! scope=row| Power
+| 1000 W || 1000 W
+|-
+! scope=row| Test processing time
+| 2 minutes || 10 minutes
+|-
+! scope=row| Test average temperature
+| 43°C || 47°C
+|}
-Wafers: 1<br>
-Size: 100 mm<br>
-Boat position: Center of chamber<br>
-Test wafer position: middle of boat<br>
-Total gas flow rate: 500 sccm<br>
-Gas mix ratio: tested parameter<br>
-Chamber pressure: 1.25 mbar<br>
-Power: 1000 W<br>
-Processing time: 2 minutes<br>
-Temperature (average): 43°C
-<br clear="all" />
-'''Full boat:'''<br>
-Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 50-70% nitrogen gives the highest ashing rate.
-Wafers: 25<br>
-Size: 100 mm<br>
-Boat position: Center of chamber<br>
-Test wafer position: middle of boat<br>
-Total gas flow rate: 200 sccm<br>
-Gas mix ratio: tested parameter<br>
-Chamber pressure: 1.3 mbar<br>
-Power: 1000 W<br>
-Processing time: 10 minutes<br>
-Temperature (average): 43°C
 <br clear="all" />