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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,301 edits
Line 607: Line 607:
*Pressure:Fully open APC valve (<2 mTorr)
*Pressure:Fully open APC valve (<2 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
|Decreased the platen power a little to see if this could remove the trenching. Not much different from the last.
|After some major chemical cleans I could not repeat the results of C10834. I need to increase the C4H8 to fairly match the results
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<gallery caption=" C12508: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:11.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
<gallery caption=" C12508: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:11.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
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