Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

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 File:C10844_13.jpg
 </gallery>
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+|- style="vertical-align:top;"
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+*Coil Power [W]:300
+*'''Platen Power [W]: 25'''
+*Platen temperature [<sup>o</sup>C]: 20
+*H2 flow [sccm]:0
+*O2 flow [sccm]: 10
+*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 11.5
+*He flow [sccm]:100
+*Pressure:Fully open APC valve (<2 mTorr)
+*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
+|Decreased the platen power a little to see if this could remove the trenching. Not much different from the last.
+|
 <gallery caption=" C12508: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:11.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
 File:C12508_03__14.jpg
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 File:C12508_03__12.jpg
 </gallery>
+|}