Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions
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! colspan=" | ! colspan="7" align="center"| Etch rates in zep resist (nm/min) | ||
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! One point on wafer | ! One point on wafer | ||
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Revision as of 07:24, 2 May 2011
| Recipe | nano1.0 | nano1.1 | nano1.2 | nano1.3 | nano1.21 | nano1.4 | nano1.41 | |
|---|---|---|---|---|---|---|---|---|
| C4F8 (sccm) | 52 | 52 | 52 | 52 | 75 | 75 | 75 | |
| SF6 (sccm) | 38 | 38 | 38 | 38 | 38 | 38 | 38 | |
| O2 (sccm) | 0 | 0 | 0 | 0 | 0 | 0 | 0 | |
| Coil power (W) | 800 (forward) | 600 (forward) | 800 (forward) | 600 (forward) | 800 (forward) | 800 (forward) | 800 (forward) | |
| Platen power (W) | 50 | 50 | 50 | 40 | 50 | 50 | 75 | |
| Pressure (mtorr) | 4 | 4 | 4 | 4 | 4 | 4 | 4 | |
| Temperature (degs C) | 10 | 10 | -10 | -10 | -10 | -20 | -20 | |
| Process time (s) | 120 | 120 | 120 | 120 | 120 | 120 | 120 | |
| Nominal line width | Etched depths (nm) | |||||||
| 30 nm | ||||||||
| 60 nm | ||||||||
| 90 nm | ||||||||
| 120 nm | ||||||||
| 150 nm | ||||||||
| Nominal line width | Etch rates in trenches (nm/min) | |||||||
| 30 nm | ||||||||
| 60 nm | ||||||||
| 90 nm | ||||||||
| 120 nm | ||||||||
| 150 nm | ||||||||
| Etch rates in zep resist (nm/min) | ||||||||
| One point on wafer | ||||||||
| Images | Images | Images | Images | Images | Images | Images | Images | |
The nanoetch