Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

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Revision as of 07:23, 2 May 2011

Recipe nano1.0 nano1.1 nano1.2 nano1.3 nano1.21 nano1.4 nano1.41
C4F8 (sccm) 52 52 52 52 75 75 75
SF6 (sccm) 38 38 38 38 38 38 38
O2 (sccm) 0 0 0 0 0 0 0
Coil power (W) 800 (forward) 600 (forward) 800 (forward) 600 (forward) 800 (forward) 800 (forward) 800 (forward)
Platen power (W) 50 50 50 40 50 50 75
Pressure (mtorr) 4 4 4 4 4 4 4
Temperature (degs C) 10 10 -10 -10 -10 -20 -20
Process time (s) 120 120 120 120 120 120 120
Nominal line width Etched depths (nm)
30 nm
60 nm
90 nm
120 nm
150 nm
Nominal line width Etch rates in trenches (nm/min)
30 nm
60 nm
90 nm
120 nm
150 nm
Etch rates in zep resist (nm/min)
One point on wafer
Images Images Images Images Images Images Images Images

The nanoetch