Specific Process Knowledge/Lithography/Strip: Difference between revisions
Appearance
| Line 310: | Line 310: | ||
[[File:PA_power_v2.png|320px|thumb|Ashing rate as function of microwave power.|right]] | [[File:PA_power_v2.png|320px|thumb|Ashing rate as function of microwave power.|right]] | ||
The ashing rate is related to the power used during processing. Higher power gives higher ashing rate. | The ashing rate is related to the power used during processing. Higher power gives higher ashing rate. | ||
'''Single substrate:'''<br> | '''Single substrate:'''<br> | ||